Analysis of Metallic Nanoparticles in Semiconductor-Grade Sulfuric Acid Using the NexION 5000 SP-ICP-MS | PerkinElmer
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Analysis of Metallic Nanoparticles in Semiconductor-Grade Sulfuric Acid

Application Note

Analysis of Metallic Nanoparticles in Semiconductor-Grade Sulfuric Acid Using the NexION 5000 SP-ICP-MS

Analysis of Metallic Nanoparticles in Semiconductor-Grade Sulfuric Acid

Introduction

Fine and specialized chemicals are used throughout the manufacturing process of semiconductor and electronic products, requiring strict control of impurities. Among these impurities, contaminants of inorganic nature can adversely affect device performance and impact the yield of the fabrication process.

Sulfuric acid (H2SO4) is one such chemical, primarily used for etching and cleaning organic and inorganic impurities on silicon wafers. Due to its wide applicability in this industry, the analysis of impurities in sulfuric acid is increasingly critical and requires instrumentation capable of ultra-trace-level detection. This work demonstrates the accurate analysis of metallic nanoparticles in sulfuric acid using the NexION® 5000 Multi-Quadrupole ICP-MS in single particle mode.